دیتاشیت GT60M324(Q)
مشخصات دیتاشیت
| نام دیتاشیت |
GT60M324(Q)
|
| حجم فایل |
91.677
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Type:
-
-
Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
TOSHIBA GT60M324(Q)
-
Operating Temperature:
+175°C@(Tj)
-
Collector Current (Ic):
60A
-
Power Dissipation (Pd):
254W
-
Turn?on Delay Time (Td(on)):
310ns
-
Input Capacitance (Cies@Vce):
3.6nF@10V
-
Turn?on Switching Loss (Eon):
-
-
Diode Forward Voltage (Vf@If):
1.3V@15A
-
Total Gate Charge (Qg@Ic,Vge):
-
-
Turn?off Delay Time (Td(off)):
360ns
-
Pulsed Collector Current (Icm):
120A
-
Turn?off Switching Loss (Eoff):
-
-
Diode Reverse Recovery Time (Trr):
800ns
-
Collector Cut-Off Current (Ices@Vce):
1mA@900V
-
Collector-Emitter Breakdown Voltage (Vces):
900V
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
7.5V@60mA
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge):
1.7V@60A,15V
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Package:
TO-3P-3
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Manufacturer:
TOSHIBA
